 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BCR 48PN NPN/PNP Silicon Digital Tansistor Array * Switching circuit, inverter, interface circuit, drive circuit * Two (galvanic) internal isolated NPN/PNP Transistor in one package * Built in bias resistor NPN: R1 = 47k, R2 = 47k PNP: R1 = 2.2k, R2 = 47k Tape loading orientation Type BCR 48PN Marking Ordering Code Pin Configuration WTs Package Q62702-C2496 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Emitter-base voltage DC collector current DC collector current Input on voltage Input on voltage Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 50 50 10 5 70 100 50 10 250 150 - 65 ... + 150 275 140 Unit V VCEO VCBO NPN PNP NPN PNP NPN PNP VEBO VEBO IC IC Vi(on) Vi(on) Ptot Tj Tstg RthJA RthJS 0.5cm2 Cu mA V mW C Total power dissipation, TS = 115C K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / Semiconductor Group 1 Dec-09-1996 BCR 48PN Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC Characteristics for NPN Type Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 47 1 - V IC = 100 A, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 100 A, IB = 0 Collector cutoff current ICBO 100 nA A 164 70 mV 0.3 V 0.8 1.5 3 62 1.1 k - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) Vi(on) 1 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics for NPN Type Transition frequency R1 R1/R2 fT 32 0.9 MHz 100 3 pF - IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% Semiconductor Group 2 Dec-09-1996 BCR 48PN Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC Characteristics for PNP Type Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 2.2 0.047 - V IC = 100 A, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 100 A, IB = 0 Collector cutoff current ICBO 100 164 nA VCB = 40 V, IE = 0 Emitter cutoff current IEBO - VEB = 5 V, IC = 0 DC current gain hFE 70 - V 0.3 0.8 1.1 2.9 0.052 k - IC = 5 mA, VCE = 5 V, BC ... 16 W Collector-emitter saturation voltage 1) VCEsat Vi(off) 0.4 IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on voltage Vi(on) 0.5 IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics for PNP Type Transition frequency R1 R1/R2 fT 1.5 0.042 MHz 200 3 pF - IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% Semiconductor Group 3 Dec-09-1996 BCR 48PN NPN TYPE DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 3 10 2 - hFE 10 2 IC mA 10 1 10 1 10 0 -1 10 10 0 10 1 10 2 mA 10 0 0.0 0.2 0.4 0.6 V IC 1.0 V CEsat Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 2 10 1 mA mA IC 10 1 IC 10 0 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 -3 0 1 2 3 V 5 V i(on) V i(off) Semiconductor Group 4 Dec-09-1996 BCR 48PN PNP TYPE DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 3 10 2 - hFE 10 2 IC mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 0 0.0 0.1 0.2 0.3 V IC 0.5 V CEsat Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 2 10 1 mA mA IC 10 1 IC 10 0 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 -3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V i(on) V 1.0 V i(off) Semiconductor Group 5 Dec-09-1996 BCR 48PN Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy 300 mW Ptot 200 TS TA 150 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load Ptotmax / PtotDC = f(tp) 10 3 10 3 K/W - RthJS 10 2 Ptotmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 6 Dec-09-1996 |
Price & Availability of BCR48PN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |